Engenharia Elétrica

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https://repositorio.fei.edu.br/handle/FEI/21

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Navegando Engenharia Elétrica por Autor "Afzalian A."

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    Artigo
    Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
    (2014) Novo C.; Giacomini R.; Doria R.; Afzalian A.; Flandre D.
    This work presents a study of the illuminated to dark ratio (IDR) of lateral SOI PIN photodiodes. Measurements performed on fabricated devices show a fivefold improvement of the IDR when the devices are biased in accumulation mode and under high temperatures of operation, independently of the anode voltage. The obtained results show that the doping concentration of the intrinsic region has influence on the sensitivity of the diodes: the larger the doping concentration, the smaller the IDR. Furthermore, the photocurrent and dark current present lower values as the silicon film thickness is decreased, resulting in a further increase in the illuminated to dark ratio. © 2014 IOP Publishing Ltd.
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    Artigo de evento
    Operation of lateral SOI PIN photodiodes with back-gate bias and intrinsic length variation
    (2013) Novo C.; Giacomini R.; Afzalian A.; Flandre D.
    This paper presents an analysis of the operation of lateral thin-film SOI PIN photodiodes for the detection of short wavelengths. Experimental measurements were done varying the back-gate bias in order to point out the behavior of the device. The temperature influence was also analyzed in 300K to 500K range. In addition, by using two-dimensional numerical simulations, the intrinsic length (LI) was changed, with the purpose of predicting the performance of this photodetector in more advanced technologies. © The Electrochemical Society.