Departamento de Física

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https://repositorio.fei.edu.br/handle/FEI/785

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A proposal to study long-lived isotopes produced by thermal neutron irradiation of digital devices
(2019-08-05) ZAHN, G. S.; GENEZINI, F. A; MORALLES, M.; SIQUEIRA, P. T. D.; MEDINA, N. H.; AGUIAR, V. A. P.; MACCHIONE, E. L. A.; ADDED, N.; Marcilei Aparecida Guazzelli
© Published under licence by IOP Publishing Ltd.In this work, we present a facility to study errors in digital devices exposed to thermal neutrons from a beam hole in the IEA-R1 nuclear reactor, as well as the long-lived isotopes produced in the irradiation of digital electronic devices under a slow neutron field. Preliminary results obtained with the analysis of a 28nm SRAM-based Xilinx Zynq-7000 FPGA are presented.
Analysis of COTS FPGA SEU-sensitivity to combined effects of conducted-EMI and TID
(2017-07-31) VILLA, P.; BEZERRA, E.; GOERL, R.; POEHLS, L.; VARGA, F.; MEDINA N.; ADDED, N.; DE AGUIAR, V.; MACCHIORE, E.; AGUIRRE, F.; Marcilei Aparecida Guazzelli
© 2017 IEEE.The desirable use of Field-Programmable Gate Arrays (FGPAs) in aerospace & defense field has become a general consensus among IC and embedded system designers. Radiation-hardened (rad-hard) electronics used in this domain is regulated under severe and complex political and commercial treaties. In order to refrain from these undesired political and commercial barriers component-off-the-shelf (COTS) FPGAs (despite the fact of their low reliability) have been considered as a promising alternative to replace rad-hard ICs. In this scenario, this paper analyses the Single-Event Upset (SEU) sensitivity of the Microsemi ProASIC3E A3PE1500 COTS FPGA for a combined set of Electromagnetic Interference (EMI) and Total-Ionizing Dose (TID) tests. This component is under pre-qualification process for use in some satellites of the Brazilian Space Program. Experimental results are herein briefly presented and discussed. These results allow us to consider this component as a strong candidate to replace rad-hard FPGAs, if its use is combined with strict system-level fault-tolerant strategies for error detection and correction (EDAC).
Analysis of FPGA SEU sensitivity to combined effects of conducted EMI and TID
(2016-05-17) BENFICA, J.; GREEN, B.; PORCHER, B. C.; POEHLS, L. B.; VARGAS, F.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P. DE; MACCHIONE, E. L. A.; AGUIRRE, F.; Marcilei Aparecida Guazzelli
© 2016 IEEE.This work proposes a novel methodology to evaluate SRAM-Based FPGA SEU susceptibility to noise on VDD power pins and total-ionizing dose (TID). The procedure was demonstrated for SEU measurements on a Xilinx Spartan 3E FPGA operating in an 8MV Pelletron accelerator, whereas TID was deposited by means of a Shimadzu XRD-7000 X-ray diffractometer. The injected noise on power supply bus comprised of voltage dips of 16.67% and 25% of VDD at two different frequencies 10Hz and 5kHz, and was performed according to the IEC 61.000-4-29 international standard.
Analyzing the influence of the angles of incidence on SEU and MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA
(2017) TONFAT, J.; KASTENSMIDT, F. L.; ARTOLA, L.; HUBERT, G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; Marcilei Aparecida Guazzelli
© 2016 IEEE.This work highlights the impact of low LET heavy ions particles on the reliability of 28-nm Bulk SRAM cells from 4rtix-7 FPGA. Radiation tests showed significant differences in he MBU cross section of configuration (CRAM) and BRAM memory cells under various angles of incidence. Radiation results re compared with simulations at transistor level by using the ioft error tool, MUSCA SEP3 (MUlti-SCAle Single Event henomenon Prediction Platform) coupled with circuit imulations with the aim to analyze the differences of upset ensitivity as a function of layout SRAM. This analysis leads to etermine the correct layout and technology used in the tested PGA. By using the detailed classification of MBU events, it is ossible to analyze the effectiveness of correction mechanisms of he FPGA configuration memory.
Analyzing the Influence of using Reconfiguration Memory Scrubber and Hardware Redundancy in a Radiation Hardened FPGA under Heavy Ions
(2018-09-05) OLIVEIRA, A.B. DE; BENEVENUT,I F.; BENITES, L. A. C.; RODRIGUES, G. S.; KASTENSMIDT, F. L.; ADDED, N.; AGUIAR, V. A. P.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; DEBARGE, C.
© 2018 IEEE.This work investigates the influence of using the built-in configuration memory scrubber and triple modular hardware redundancy in the cross section of a radiation-hardened SRAM-based FPGA from NanoXplore. Different designs versions are investigated under heavy ions for the occurrence of transient errors, failures, and timeouts. The calculated dynamic cross-sections are in agreement with the expected order of magnitude of radiation hardened SRAM-based FPGAs. Results show that the most reliable configuration is using DSPs for the operational logic and applying full design redundancy combined with scrubbing.
Brazilian facilities to study radiation effects in electronic devices
(2013-05-05) MEDINA, N. H.; Santos, R. B. B.; SEIXAS, L. E.; TABACNIKS, M. H.; SILVEIRA, M. A. G.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; GIACOMINI, R.; MACCHIONE, E. L. A.; DE MELO, M. A. A.; OLIVEIRA, J. A.
Charge deposition analysis of heavy-ion-induced single-event burnout in low-voltage power VDMOSFET
(2022-10-05) ALBERTON, S. G.; AGUIAR, V. A. P.; MEDINA, N. H.; ADDED, N.; MACCHIONE, E. L. A.; MENEGASSO, R.; CESARIO. G. J.; SANTOS, H. C.; SCARDUELLI, V. B.; ALCANTARA-NUNEZ, J. A.; Marcilei Aparecida Guazzelli; Roberto Santos; FLECHAS, D.
© 2022 Elsevier LtdThe heavy-ion-induced single-event burnout (SEB) risk in power MOSFETs (metal-oxide-semiconductor field-effect transistors) can be assessed in ground facilities, although it is costly and time-demanding. For this reason, there have been few experimental studies dedicated to investigate the relevant parameter related to the description of ion-induced SEB phenomenon. In this work the heavy-ion-induced SEB in a low-voltage power VDMOSFET (vertical double-diffused MOSFET) is studied using several ion-energy combinations. A self-consistent statistical analysis is carried out in order to elucidate the relationship between charge deposition and SEB triggering. Experimental data is compared to a predictive model from the literature for SEE (single-event effect) worst-case prediction in power MOSFETs, supporting for the first time its relevance to the worst-case prediction in the SEB mechanism.
Determination of stable isotope ratios using nuclear reaction analysis coupled with a particle-gamma coincidence method
(2021-01-05) ALLEGRO, P.R.P.; RIZZUTTO, M.D.A.; ADDED, N.; AGUIAR, V.A.P.D.; TOUFEN, D.L.; MACCHIONE, E.L.A.; MEDINA, N.H.; RIBAS, R.V.; OLIVEIRA, J.R.B.D.; ESCUDEIRO, R.; ALCANTARA-NUNEZ, J.A.; CURADO, J.F.; SCARDUELLI, V.B.; ZAGATTO, V.A.B.; RODRIGUES, C.L.; TABACNIKS, M.H.
© The Royal Society of Chemistry.A non-destructive standard-free analytical method of obtaining stable isotope ratios in materials using nuclear reactions excited by an 11.75 MeV proton beam is demonstrated for a special 63Cu/65Cu target characterized traceably by Rutherford backscattering spectrometry (using 2.2 MeV protons). The method is general and is capable of being a useful alternative to standard ICP-MS methods. Relatively high energy proton beams are required to excite multiple isotopes of most elements of interest, and the many resulting nuclear reaction products are filtered by coincidence methods to characterize the desired isotope ratios. Specifically: the use of particle-gamma coincidences permits identification of specific channels populated in the nuclear reaction and avoids or minimizes typical drawbacks of this method including high backgrounds and interfering reactions. The test Cu target was a sandwich of a natural Cu and an enriched 65Cu foil, and particle-gamma coincidences were measured for the reactions 63Cu(p,p?){63Cu,60Ni} and the corresponding reactions for 65Cu (where "p"represents the energetic charged particle reaction product: proton or alpha). Limitations of the method, and applications in cultural heritage and other fields are discussed.
Dynamic heavy ions SEE testing of NanoXplore radiation hardened SRAM-based FPGA: Reliability-performance analysis
(2019) OLIVEIRA, A.; BENEVENUTI, F.; BENITES, L.; RODRIGUES, G.; KASTENSMIDT, F.; ADDED, N.; AGUIAR, V.; MEDINA, N.; Marcilei Aparecida Guazzelli; TAMBARA, L.
© 2019 Elsevier LtdNanoXplore is the European pioneer vendor to develop ITAR-free radiation-hardened SRAM-based FPGAs. This work is the first to explore dynamic SEE tests in the NG-Medium FPGA device. The reliability-performance analysis of an embedded unmitigated design is performed under heavy ion-induced errors. Moreover, the improvements of additional user level fault-tolerance techniques, such as redundancy and scrubbing, are explored. The design sensitiveness is evaluated through dynamic cross section, mean fluence to failure, and empiric reliability. Results obtained demonstrate the best tradeoff between area, performance, and reliability is achieved combining full design redundancy, periodic scrubbing, arithmetic functions implemented in DSPs, logical resets between executions, and area-oriented application execution.
Electric field and temperature effects in irradiated MOSFETs
(2016-12-04) Marcilei Aparecida Guazzelli; SANTOS, R. B. B.; LEITE, F. G.; ARAUJO, N. E.; CIRNE, K. H.; MELO, M. A. A.; RALLO, A.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; ADDED, N.; MEDINA, N.H.
© 2016 Author(s).Electronic devices exposed to ionizing radiation exhibit degradation on their electrical characteristics, which may compromise the functionality of the device. Understanding the physical phenomena responsible for radiation damage, which may be specific to a particular technology, it is of extreme importance to develop methods for testing and recovering the devices. The aim of this work is to check the influence of thermal annealing processes and electric field applied during irradiation of Metal Oxide Semiconductor Field Effect Transistors (MOSFET) in total ionizing dose experiments analyzing the changes in the electrical parameters in these devices.
Evaluating Soft Core RISC-V Processor in SRAM-Based FPGA under Radiation Effects
(2020-07-05) OLIVEIRA, A. B.; TAMBARA, L. A.; BENEVENUTI, F.; BENITES, L. A. C.; ADDED, N.; AGUIAR, V. A. P.; MEDINA, N. H.; Marcilei Aparecida Guazzelli; KASTENSMIDT, F. L.
© 1963-2012 IEEE.This article evaluates the RISC-V Rocket processor embedded in a Commercial Off-The-Shelf (COTS) SRAM-based field-programmable gate array (FPGA) under heavy-ions-induced faults and emulation fault injection. We also analyze the efficiency of using mitigation techniques based on hardware redundancy and scrubbing. Results demonstrated an improvement of $3\times $ in the cross section when scrubbing and coarse grain triple modular redundancy are used. The Rocket processor presented analogous sensitivity to radiation effects as the state-of-the-art soft processors. Due to the complexity of the system-on-chip, not only the Rocket core but also its peripherals should be protected with proper solutions. Such solutions should address the specific vulnerabilities of each component to improve the overall system reliability while maintaining the trade-off with performance.
Evaluating the Reliability of Different Voting Schemes for Fault Tolerant Approximate Systems
(2023-06-20) BALEN, T. R.; GONZALEZ, C. J.; OLIVEIRA, I. F. V.; DA ROSA JR. L. S.; SOARES, R. I.; SCHVITTZ, R. B.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; Marcilei Aparecida Guazzelli; MEDINA, N. H.; BUTZEN, P. F.
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.This work presents a study on the reliability of voters for approximate fault tolerant systems in the context of single event effects and electromagnetic interference. A first case study analyses different topologies of single-bit majority voters for logic circuits employing fault injection by simulation. In these simulations, an analysis is first performed to identify the critical diffusion areas of the physical implementation according to the voter input vector. Additionally, as a second case study, practical heavy ion experiments on different architectures of software-based approximate voters for mixed-signal applications are also presented, and the cross section of each voter is evaluated. The system comprising the voters was irradiated in two distinct experiments with an 16O ion beam, producing an effective LET at the active region of 5.5 MeV/mg/cm 2 . As a complementary study, a conducted electromagnetic interference injection was also performed, considering two distinct voting schemes. Results of the case-studies allow identifying the most tolerant voter architectures (among the studied ones) for approximate computing applications under single event effects and electromagnetic interference.
Experimental Setups for Single Event Effect Studies
(2016) Medina, N. H.; Porcher, B.; AGUIAR, VITOR A. P.; ADDED, N.; AGUIRRE, F. R.; MACCHIONE, E. L. A.; Alberton, S.G.; SILVEIRA, M. A. G.; Guazzelli, Marcilei A.; Benfica, J.; VARGAS, FABIAN
First successful SEE measurements with heavy ions in Brazil
(2014-07-18) MEDINA, N. H.; Marcilei Aparecida Guazzelli; ADDED, N.; AGUIAR. V. A . P.; Renato Giacomini; MACHIONE, E. L. A.; DE MELO, M. A. A.; SANTOS, R. B. B.; SEIXAS, L. E.
© 2014 IEEE.In this work, the first successful SEE measurements with heavy ions in Brazil is reported. The heavy ions were produced at the São Paulo 8 UD Pelletron accelerator. 12C, 16O, 19F, 28Si, 35Cl, 63Cu and 107Ag heavy ion beams were used to test a commercial off-the-shelf transistor. During irradiation, the response of a pMOS transistor was continuously monitored to measure the SEE events. In order to achieve a uniform low intensity beam the heavy ions were Rutherford scattered at 15 by a 275 μg/cm2 gold foil.
Heavy ions induced single event upsets testing of the 28 nm Xilinx Zynq-7000 all programmable SoC
(2015-07-13) TAMBARA, L. A.; KASTENSMIDT, F. L.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; AGUIRRE, F.; MACCHIONE, E. L. A.; Marcilei Aparecida Guazzelli
© 2015 IEEE.The recent advance of silicon technology has allowed the integration of complex systems in a single chip. Nowadays, Field Programmable Gate Array (FPGA) devices are composed not only of the programmable fabric but also by hard-core processors, dedicated processing block interfaces to various peripherals, on-chip bus structures and analog blocks. Among the latest released devices of this type, this work focuses in the 28 nm Xilinx Zynq-7000 All Programmable SoC (APSoC). While not immune to the radiation environment in space, the Zynq-7000 seems to be very attractive for the aerospace sector due to its high computational power capability and low-power consumption. In this work, results from heavy ions testing for Zynq-7000 are presented. The experiments were performed in a Brazilian facility located at the University of São Paulo, Brazil.
Heavy-Ion-Induced Avalanche Multiplication in Low-Voltage Power VDMosfet
(2021-09-13) ALBERTON. S. G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.; Marcilei Aparecida Guazzelli; Roberto Santos
© 2021 IEEE.Lackner's theory for avalanche multiplication in semiconductor devices provides physical interpretation for the model parameters and obtaining them through experimental methods is necessary. In this work, the charge collection mechanisms of heavy-ion-induced avalanche multiplication in power MOSFETs are studied based on Lackner's impact ionization model. The heavy-ion-induced impact ionization coefficients were estimated by comparing collected charge values obtained from computational simulations and experimental measurements.
Isomeric state in the odd-odd 68Ga nucleus
(2022-01-05) ESCUDEIRO, R.; VASCONCELOS, C. E. C; ALLEGRO, P. R. P.; MEDINA, N. H.; TUFEN, D. L.; ADDED, N.; AGUIAR, V. A. P.; ALBERTON. S. G. P. N.; ALCANTARA-NUNEZ, J.; Marcilei Aparecida Guazzelli; MACCHIONE. E. L. A.; OLIVEIRA, J. R. B.; RIBAS, R. V.; SCARDUELLI, V. B.
© 2022 Institute of Physics Publishing. All rights reserved.The half life of the 7− isomeric state of the odd-odd 68Ga nucleus was measured using a particle-γ delayed coincidence technique. The 68Ga nuclei were produced using the fusion-evaporation reaction 55Mn(16O, 2pn)68Ga at 55 MeV incident beam energy. The beam was produced by the 8 MV Pelletron accelerator of the Nuclear Physics Open Laboratory of the University of São Paulo. The half life was measured using the Isomeric State Measurement System (SISMEI). The obtained value was 60.83(25) ns, compatible with previous measurements. The 68Ga excited states were well described with the Large Scale Shell Model using the JUN45 residual interaction.
Radiation effect mechanisms in electronic devices
(2013-12-01) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F.; CUNHA, F.; CIRNE, K. H.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P.
© Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence.In this work, P- and N-MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) were submitted to X-ray and ion beams. CD 4007, a commercial off-the-shelf integrated circuit composed of six transistors, three P-type and three N-type, in a single package, was used. The integrated circuits were exposed to 60 MeV 35Cl ion beams using the São Paulo 8UD Pelletron Accelerator and 10 keV X-ray radiation, using a Shimadzu XRD-7000 X-ray diffractometer. The total dose effects due to ionizing radiation in MOSFET were analyzed. The results indicate Vth depends on the absorbed dose and dose rate. The deviation of Vth is higher for P-MOS, while the change in slope is higher for N-MOS. TID (Total Ionizing Dose) caused by heavy ion does not seem to affect mobility. After heat treatment, the device establishes a different equilibrium state compared to that achieved at room temperature. The heat treatment worsens the P-type characteristics and improves the N-type.
Reducing Soft Error Rate of SoCs Analog-to-Digital Interfaces with Design Diversity Redundancy
(2020-03-05) GONZALEZ, C. J.; ADDED, N.; MACCHIONE, E. L. A.; AGUIAR, V. A. P.; KASTENSMIDT, F. G. L.; PUCHNER, H. K.; Marcilei Aparecida Guazzelli; MEDINA, N. H.; BALEN, T. R.
© 1963-2012 IEEE.In this article, a commercial programmable system-on-chip (PSoC 5, from Cypress Semiconductor) is tested under heavy-ion irradiation with a focus on the analog-to-digital interface blocks of the system. For this purpose, a data acquisition system (DAS) was programmed into the device under test and protected with a design diversity redundancy technique. This technique implements different levels of diversity (architectural and temporal) by using two different architectures of converters (a Σ Δ converter and two successive approximation register (SAR) converters) operating with distinct sampling rates. The experiment was performed in a vacuum chamber, using a 16O ion beam with 36-MeV energy and sufficient penetration into the silicon to produce an effective linear energy transfer (LET) of 5.5 MeV/mg/cm2 at the active region. The average flux was approximately 350 particles/s/cm2 for 246 min. The individual susceptibility of each converter to single-event effects is evaluated, as well as the whole system cross section. Results show that the proposed technique is effective to mitigate errors originating at the converters since 100% of such errors were corrected by using the diversity redundancy technique. Results also show that the processing unit of the system is susceptible to hangs that can be mitigated using watchdog techniques.
Robust convolutional neural networks in sram-based fpgas: A case study in image classification
(2021-08-23) BENEVENUTI, F.; KASTENSMIDT, F.; OLIVEIRA, A.; ADDED, N.; AGUIAR, V.; MEDINA, N.; Marcilei Aparecida Guazzelli
© 2021, Brazilian Microelectronics Society. All rights reserved.— This work discusses the main aspects of vulnerability and degradation of accuracy of an image classification engine implemented into SRAM-based FPGAs under faults. The image classification engine is an all-convolutional neural-network (CNN) trained with a dataset of traffic sign recognition benchmark. The Caffe and Ristretto frameworks were used for CNN training and fine-tuning while the ZynqNet inference engine was adopted as hardware implementation on a Xilinx 28 nm SRAM-based FPGA. The CNN under test was generated using an evolutive approach based on genetic algorithm. The methodologies for qualifying this CNN under faults is presented and both heavy-ions accelerated irradiation and emulated fault injection were performed. To cross validate results from radiation and fault injection, different implementations of the same CNN were tested using reduced arithmetic precision and protection of user data by Hamming codes, in combination with configuration memory healing by the scrubbing mechanism available in Xilinx FPGA. Some of these alternative implementations increased significantly the mission time of the CNN, when compared to the original ZynqNet operating on 32 bits floating point number, and the experiment suggests areas for further improvements on the fault injection methodology in use.

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