Browsing by Author MARTINO, J. A.

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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
2012An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devicesTrevisoli, Renan Doria; CLAEYS, Cor; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO; MARTINO, J. A.; SIMOEN, Eddy
2014Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiationBORDALLO, C. C. M.; GUAZZELLI, Marcilei Aparecida; TEIXEIRA, F. F.; MARTINO, J. A.; AGOPIAN, P. G. D.; CLAEYS, C.; SIMOEN, E.
2013Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog BehaviorPERUZZI, V. V.; Gimenez, S. P.; AGOPIAN, P. G. D.; SILVEIRA, M. A. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.
2006ESTIMATING TEMPERATURE DEPENDENCE OF GENERATION LIFETIME EXTRACTED FROM DRAIN CURRENT TRANSIENTSMARTINO, J. A.; GALETI, M.;Galeti, M;GALETI, MILENE; RAFI, J. M.; MERCHA, A.; SIMOEN, E.; CLAEYS, C.
2013Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substratesDoria, Rodrigo Trevisoli; MARTINO, J. A.; SIMOEN, Eddy; CLAEYS, Cor; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO
2006Modeling Silicon on Insulator MOS Transistor with Nonrectangular-Gate LayoutsGIACOMINI, R.;RENATO GIACOMINI;R. C. GIACOMINI;RENATO CAMARGO GIACOMINI;Giacomini, R;Giacomini, R. C.;GIACOMINI, RENATO;GIACOMINI, RENATO C.;GIACOMINI, RENATO CAMARGO;GIACOMINI, R C; MARTINO, J. A.
2012A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate TransistorPERIN, A. L.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R.