Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1054
Title: An Asymmetric Channel SOI nMOSFET for Reducing Parasitic Effects and Improving Output Characteristics
Authors: PAVANELLO, Marcelo A.
MARTINO, João Antonio
DESSARD, V.
FLANDRE, Denis
Issue Date: 2000
Journal: Electrochemical and Solid-State Letters
ISSN: 1099-0062
Citation: PAVANELLO, Marcelo A.; MARTINO, João Antonio; DESSARD, V.; FLANDRE, Denis. An Asymmetric Channel SOI nMOSFET for Reducing Parasitic Effects and Improving Output Characteristics. Electrochemical and Solid-State Letters, v. 3, n. 1, p. 50-52, 2000.
Access Type: Acesso Aberto
URI: https://repositorio.fei.edu.br/handle/FEI/1054
Appears in Collections:Artigos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.