Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1056
Title: Graded-Channel Fully Depleted Silicon-On-Insulator nMOSFET for Reducing the Parasitic Bipolar Effects
Authors: PAVANELLO, Marcelo A.
MARTINO, João Antonio
FLANDRE, Denis
Issue Date: 2000
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: PAVANELLO, Marcelo A.; MARTINO, João Antonio; FLANDRE, Denis. Graded-Channel Fully Depleted Silicon-On-Insulator nMOSFET for Reducing the Parasitic Bipolar Effects. Solid-State Electronics, v. 44, n. 6, p. 917-922, 2000.
Access Type: Acesso Aberto
DOI: 10.1016/S0038-1101(00)00032-0
URI: https://repositorio.fei.edu.br/handle/FEI/1056
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