Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1067
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dc.contributor.authorPAVANELLO, Marcelo A.
dc.contributor.authorMARTINO, João Antonio
dc.contributor.authorSIMOEN, Eddy
dc.contributor.authorROOYACKERS, Rita
dc.contributor.authorCOLLAERT, Nadine
dc.contributor.authorCLAEYS, Cor
dc.date.accessioned2019-08-19T23:45:08Z-
dc.date.available2019-08-19T23:45:08Z-
dc.date.issued2007
dc.identifier.citationPAVANELLO, Marcelo A.; MARTINO, João Antonio; SIMOEN, Eddy; ROOYACKERS, Rita; COLLAERT, Nadine; CLAEYS, Cor. Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation. Solid-State Electronics, v. 51, n. 2, p. 285-291, 2007.
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1067-
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Aberto
dc.titleEvaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operationpt_BR
dc.typeArtigopt_BR
dc.identifier.doi10.1016/j.sse.2007.01.012
dc.description.volume51
dc.description.issuenumber2
dc.description.firstpage285
dc.description.lastpage291
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