Cryogenic operation of FinFETs aiming at analog applications

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Tipo de produção
Artigo
Data
2009
Autores
Pavanello M.A.
Martino J.A.
Simoen E.
Claeys C.
Orientador
Periódico
Cryogenics
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Título de Volume
Citação
PAVANELLO, Marcelo A.; MARTINO, João Antonio; SIMOEN, Eddy; CLAEYS, Cor. Cryogenic Operation of FinFETs Aiming at Analog Applications. Cryogenics (Guildford), v. 49, n. 11, p. 590-594, 2009.
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Resumo
FinFETs are recognized as promising candidates for the CMOS nanometer era. In this paper the most recent results for cryogenic operation of FinFETs will be demonstrated with special emphasis on analog applications. Threshold voltage, subthreshold slope and carrier mobility will be studied. Also some important figures of merit for analog circuit operation as for readout electronics, such as transconductance, output conductance and intrinsic voltage gain will be covered. It is demonstrated that the threshold voltage of undoped narrow FinFETs is less temperature-dependent than for a planar single-gate device with similar doping concentration. The temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L = 90 nm FinFET is degraded by 2 dB when the temperature reduces from 300 K to 100 K. © 2009 Elsevier Ltd. All rights reserved.

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