Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1079
Title: Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors
Authors: CONTRERAS, Esteban
CERDEIRA, Antonio
ALVARADO, Joaquin
PAVANELLO, Marcelo A.
Issue Date: 2010
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: CONTRERAS, Esteban; CERDEIRA, Antonio; ALVARADO, Joaquin; PAVANELLO, Marcelo A.. Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 5, n. 2, p. 110-115, 2010.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1079
Appears in Collections:Artigos

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