Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1099
Title: Trap density characterization through low-frequency noise in junctionless transistors
Authors: DORIA, R. T.
TREVISOLI, Renan Doria
DE SOUZA, Michelly
Pavanello, Marcelo Antonio
Issue Date: 2013
Journal: Microelectronic Engineering
ISSN: 0167-9317
Citation: DORIA, R. T.; TREVISOLI, Renan Doria; DE SOUZA, Michelly; Pavanello, Marcelo Antonio. Trap density characterization through low-frequency noise in junctionless transistors. Microelectronic Engineering, v. 109, p. 79-82, 2013.
Access Type: Acesso Aberto
DOI: 10.1016/j.mee.2013.03.090
URI: https://repositorio.fei.edu.br/handle/FEI/1099
Appears in Collections:Artigos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.