Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1100
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dc.contributor.authorCERDEIRA, Antonio
dc.contributor.authorCUETO, Magali Estrada
dc.contributor.authorINIGUEZ, Benjamin
dc.contributor.authorTREVISOLI, Renan Doria
dc.contributor.authorDORIA, Rodrigo Trevisoli
dc.contributor.authorDE SOUZA, Michelly
dc.contributor.authorPavanello, Marcelo Antonio
dc.date.accessioned2019-08-19T23:45:11Z-
dc.date.available2019-08-19T23:45:11Z-
dc.date.issued2013
dc.identifier.citationCERDEIRA, Antonio; CUETO, Magali Estrada; INIGUEZ, Benjamin; TREVISOLI, Renan Doria; DORIA, Rodrigo Trevisoli; DE SOUZA, Michelly; Pavanello, Marcelo Antonio. Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors. Solid-State Electronics, v. 85, p. 59-63, 2013.
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1100-
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Aberto
dc.titleCharge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistorspt_BR
dc.typeArtigopt_BR
dc.identifier.doi10.1016/j.sse.2013.03.008
dc.description.volume85
dc.description.firstpage59
dc.description.lastpage63
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