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|Title:||Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation|
|Authors:||NICOLETT, A. S.|
MARTINO, João Antonio
|Journal:||Jornal Of Solid State Devices And Circuits|
|Citation:||NICOLETT, A. S.; MARTINO, João Antonio; SIMOEN, E.; CLAYES, C.. Improved channel length and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Jornal Of Solid State Devices And Circuits, v. 5, n. 1, p. 1-4, 1997.|
|Appears in Collections:||Artigos|
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