Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1111
Title: Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors
Authors: ASSALTI, R.
D'OLIVEIRA, L. M.
PAVANELLO, M. A.
FLANDRE, Denis
DE SOUZA, Michelly
Issue Date: 2016
Journal: IET Circuits, Devices & Systems (Print)
ISSN: 1751-858X
Citation: ASSALTI, R.; D'OLIVEIRA, L. M.; PAVANELLO, M. A.; FLANDRE, Denis; DE SOUZA, Michelly. Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. IET Circuits, Devices & Systems (Print), v. 1, p. 1, 2016.
Access Type: Acesso Aberto
DOI: 10.1049/iet-cds.2015.0159
URI: https://repositorio.fei.edu.br/handle/FEI/1111
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