Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1118
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dc.contributor.authorPavanello, Marcelo Antonio
dc.contributor.authorSOUZA, Michelly de
dc.contributor.authorRIBEIRO, Thales Augusto
dc.contributor.authorMARTINO, João Antonio
dc.contributor.authorFLANDRE, D.
dc.date.accessioned2019-08-19T23:45:12Z-
dc.date.available2019-08-19T23:45:12Z-
dc.date.issued2016
dc.identifier.citationPavanello, Marcelo Antonio; SOUZA, Michelly de; RIBEIRO, Thales Augusto; MARTINO, João Antonio; FLANDRE, D.. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. Semiconductor Science and Technology (Print), v. 31, p. 114005, 2016.
dc.identifier.issn0268-1242
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1118-
dc.relation.ispartofSemiconductor Science and Technology (Print)
dc.rightsAcesso Aberto
dc.titleImproved operation of graded-channel SOI nMOSFETs down to liquid helium temperaturept_BR
dc.typeArtigopt_BR
dc.identifier.doi10.1088/0268-1242/31/11/114005
dc.description.volume31
dc.description.firstpage114005
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