Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1119
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dc.contributor.authorTREVISOLI, RENAN
dc.contributor.authorSOUZA, Michelly de
dc.contributor.authorDORIA, Rodrigo Trevisoli
dc.contributor.authorKILCHYTSKA, V.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorPavanello, Marcelo Antonio
dc.date.accessioned2019-08-19T23:45:12Z-
dc.date.available2019-08-19T23:45:12Z-
dc.date.issued2016
dc.identifier.citationTREVISOLI, RENAN; SOUZA, Michelly de; DORIA, Rodrigo Trevisoli; KILCHYTSKA, V.; FLANDRE, D.; Pavanello, Marcelo Antonio. Junctionless nanowire transistors operation at temperatures down to 4.2 K. Semiconductor Science and Technology (Print), v. 31, p. 114001, 2016.
dc.identifier.issn0268-1242
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1119-
dc.relation.ispartofSemiconductor Science and Technology (Print)
dc.rightsAcesso Aberto
dc.titleJunctionless nanowire transistors operation at temperatures down to 4.2 Kpt_BR
dc.typeArtigopt_BR
dc.identifier.doi10.1088/0268-1242/31/11/114001
dc.description.volume31
dc.description.firstpage114001
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