Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1122
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dc.contributor.authorSOUZA, Michelly de
dc.contributor.authorTREVISOLI, Renan D.
dc.contributor.authorDORIA, Rodrigo Trevisoli
dc.contributor.authorPAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO
dc.date.accessioned2019-08-19T23:45:12Z-
dc.date.available2019-08-19T23:45:12Z-
dc.date.issued2013
dc.identifier.citationSOUZA, Michelly de; TREVISOLI, Renan D.; DORIA, Rodrigo Trevisoli; PAVANELLO, Marcelo A.;PAVANELLO, M. A.;PAVANELLO, M.;PAVANELLO, M.A.;PAVANELLO, MARCELO;ANTONIO PAVANELLO, MARCELO. Analysis of the leakage current in junctionless nanowire transistors. Applied Physics Letters, v. 103, n. 20, p. 202103, 2013.
dc.identifier.issn0003-6951
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1122-
dc.relation.ispartofApplied Physics Letters
dc.rightsAcesso Aberto
dc.titleAnalysis of the leakage current in junctionless nanowire transistorspt_BR
dc.typeArtigopt_BR
dc.identifier.doi10.1063/1.4829465
dc.description.volume103
dc.description.issuenumber20
dc.description.firstpage202103
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