Please use this identifier to cite or link to this item:
|Title:||Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect|
|Authors:||NICOLETT, A. S.|
MARTINO, João Antonio
|Citation:||NICOLETT, A. S.; MARTINO, João Antonio; SIMOEN, E.; CLAYES, C.. Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect. Solid-State Electronics, v. 44, p. 677-684, 2000.|
|Access Type:||Acesso Aberto|
|Appears in Collections:||Artigos|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.