Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1132
Title: Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
Authors: NICOLETT, A. S.
MARTINO, João Antonio
SIMOEN, E.
CLAYES, C.
Issue Date: 2000
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: NICOLETT, A. S.; MARTINO, João Antonio; SIMOEN, E.; CLAYES, C.. Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect. Solid-State Electronics, v. 44, p. 677-684, 2000.
Access Type: Acesso Aberto
URI: https://repositorio.fei.edu.br/handle/FEI/1132
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