Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1135
Title: Methodology to Separate Channel Conductions of Two Level Vertically Stacked SOI Nanowire MOSFETs
Authors: CARDOSO PAZ, BRUNA
CASSÉ, MIKAËL
BARRAUD, SYLVAIN
REIMBOLD, GILLES
VINET, MAUD
FAYNOT, OLIVIER
ANTONIO PAVANELLO, MARCELO
Issue Date: 2018
Journal: SOLID-STATE ELECTRONICS
ISSN: 0038-1101
Citation: CARDOSO PAZ, BRUNA; CASSÉ, MIKAËL; BARRAUD, SYLVAIN; REIMBOLD, GILLES; VINET, MAUD; FAYNOT, OLIVIER; ANTONIO PAVANELLO, MARCELO. Methodology to Separate Channel Conductions of Two Level Vertically Stacked SOI Nanowire MOSFETs. SOLID-STATE ELECTRONICS, v. 149, n. 11, p. 62-70, 2018.
Access Type: Acesso Aberto
DOI: 10.1016/j.sse.2018.08.012
URI: https://repositorio.fei.edu.br/handle/FEI/1135
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