Methodology to separate channel conductions of two level vertically stacked SOI nanowire MOSFETs
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2018
Autores
Paz B.C.
Casse M.
Barraud S.
Reimbold G.
Vinet M.
Faynot O.
Pavanello M.A.
Casse M.
Barraud S.
Reimbold G.
Vinet M.
Faynot O.
Pavanello M.A.
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Solid-State Electronics
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CARDOSO PAZ, BRUNA; CASSÉ, MIKAËL; BARRAUD, SYLVAIN; REIMBOLD, GILLES; VINET, MAUD; FAYNOT, OLIVIER; ANTONIO PAVANELLO, MARCELO. Methodology to Separate Channel Conductions of Two Level Vertically Stacked SOI Nanowire MOSFETs. SOLID-STATE ELECTRONICS, v. 149, n. 11, p. 62-70, 2018.
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© 2018 Elsevier LtdThis work proposes a new method for dissociating both channel conductions of two levels vertically stacked inversion mode nanowires (NWs) composed by a Gate-All-Around (GAA) level on top of an Ω-gate level. The proposed methodology is based on experimental measurements of the total drain current (IDS) varying the back gate bias (VB), aiming the extraction of carriers’ mobility of each level separately. The methodology consists of three main steps and accounts for VB influence on mobility. The behavior of non-stacked Ω-gate NWs are also discussed varying VB through experimental measurements and tridimensional numerical simulations in order to sustain proposed expressions of mobility dependence on VB for the bottom level of the stacked structure. Lower mobility was obtained for GAA in comparison to Ω-gate. The procedure was validated for a wide range of VB and up to 150 °C. Similar temperature dependence of mobility was observed for both Ω-gate and GAA levels.