Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1163
Title: Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs
Authors: Rodrigues, M.
Martino, J.A.
MERCHA, A.
COLLAERT, N.
SIMOEN, E.
CLAEYS, C.
Issue Date: 2010
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: Rodrigues, M.; Martino, J.A.; MERCHA, A.; COLLAERT, N.; SIMOEN, E.; CLAEYS, C.. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs. Solid-State Electronics, v. 54, p. 1592-1597, 2010.
Access Type: Acesso Aberto
DOI: 10.1016/j.sse.2010.07.007
URI: https://repositorio.fei.edu.br/handle/FEI/1163
Appears in Collections:Artigos

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