Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1166
Title: GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
Authors: Galeti, M.
RODRIGUES, M.;Rodrigues, M.;RODRIGUES, MICHELE
MARTINO, J. A.
Martino, J.A.
Collaert, N.
Simoen, E.
CLAEYS, C.
Issue Date: 2012
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: Galeti, M.; RODRIGUES, M.;Rodrigues, M.;RODRIGUES, MICHELE; MARTINO, J. A.; Martino, J.A.; Collaert, N.; Simoen, E.; CLAEYS, C.. GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics. Solid-State Electronics, v. 70, p. 44-49, 2012.
Access Type: Acesso Aberto
DOI: 10.1016/j.sse.2011.11.015
URI: https://repositorio.fei.edu.br/handle/FEI/1166
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