Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1167
Title: SOI n- and pMuGFET devices with different TiN metal gate thickness and sidewall crystal orientation
Authors: RODRIGUES, M.;Rodrigues, M.;RODRIGUES, MICHELE
GALETI, Milene
COLLAERT, Nadine
SIMOEN, Eddy
CLAEYS, Cor
MARTINO, J. A.
Martino, J A
Issue Date: 2012
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: RODRIGUES, M.;Rodrigues, M.;RODRIGUES, MICHELE; GALETI, Milene; COLLAERT, Nadine; SIMOEN, Eddy; CLAEYS, Cor; MARTINO, J. A.; Martino, J A. SOI n- and pMuGFET devices with different TiN metal gate thickness and sidewall crystal orientation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 7, n. 2, p. 107-112, 2012.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1167
Appears in Collections:Artigos

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