Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1179
Title: The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime
Authors: DORIA, Rodrigo Trevisoli
TREVISOLI, Renan Doria
SOUZA, Michelly de;DE SOUZA, M.;DE SOUZA, MICHELLY;Michelly de Souza;de Souza, Michelly
CUETO, Magali Estrada
CERDEIRA, Antonio
PAVANELLO, Marcelo A.
Issue Date: 2014
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: DORIA, Rodrigo Trevisoli; TREVISOLI, Renan Doria; SOUZA, Michelly de;DE SOUZA, M.;DE SOUZA, MICHELLY;Michelly de Souza;de Souza, Michelly; CUETO, Magali Estrada; CERDEIRA, Antonio; PAVANELLO, Marcelo A.. The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 9, n. 2, p. 110-117, 2014.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1179
Appears in Collections:Artigos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.