Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1187
Title: Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs
Authors: GALETI, M.;Galeti, M;GALETI, MILENE
Martino, J A
Simoen, E
Claeys, C
Issue Date: 2008
Journal: Semiconductor Science and Technology
ISSN: 0268-1242
Citation: GALETI, M.;Galeti, M;GALETI, MILENE; Martino, J A; Simoen, E; Claeys, C. Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs. Semiconductor Science and Technology, v. 23, p. 125011, 2008.
Access Type: Acesso Aberto
DOI: 10.1088/0268-1242/23/12/125011
URI: https://repositorio.fei.edu.br/handle/FEI/1187
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