Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1188
Title: Analog performance of SOI nMuGFETs with different TiN gate electrode thickness and high-k dielectrics.
Authors: GALETI, M.
RODRIGUES, M.
COLLAERT, N.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
Issue Date: 2011
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: GALETI, M.; RODRIGUES, M.; COLLAERT, N.; SIMOEN, E.; CLAEYS, C.; MARTINO, J. A.. Analog performance of SOI nMuGFETs with different TiN gate electrode thickness and high-k dielectrics.. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 6, p. 102-106, 2011.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1188
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