Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1192
Title: SOI n- and pMuGFET devices with different TiN metal gate thickness and sidewall crystal orientation
Authors: RODRIGUES, M.
GALETI, M.
COLLAERT, N.
SIMOEN, E.
CLAEYS, C.
MARTINO, J. A.
Issue Date: 2012
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: RODRIGUES, M.; GALETI, M.; COLLAERT, N.; SIMOEN, E.; CLAEYS, C.; MARTINO, J. A.. SOI n- and pMuGFET devices with different TiN metal gate thickness and sidewall crystal orientation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 7, n. 2012, p. 107-112, 2012.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1192
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