Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1255
Title: A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor
Authors: PERIN, A. L.
NASCIMENTO, A. S.
PEREIRA, A. S. N.
AGOPIAN, P. G. D.
MARTINO, J. A.
GIACOMINI, R.;RENATO GIACOMINI;R. C. GIACOMINI;RENATO CAMARGO GIACOMINI;Giacomini, R;Giacomini, R. C.;GIACOMINI, RENATO;GIACOMINI, RENATO C.;GIACOMINI, RENATO CAMARGO;GIACOMINI, R C
Issue Date: 2012
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: PERIN, A. L.; NASCIMENTO, A. S.; PEREIRA, A. S. N.; AGOPIAN, P. G. D.; MARTINO, J. A.; GIACOMINI, R.;RENATO GIACOMINI;R. C. GIACOMINI;RENATO CAMARGO GIACOMINI;Giacomini, R;Giacomini, R. C.;GIACOMINI, RENATO;GIACOMINI, RENATO C.;GIACOMINI, RENATO CAMARGO;GIACOMINI, R C. A Simple Electron Mobility Model Considering the Silicon-Dielectric Interface Orientation for Circular Surrounding-Gate Transistor. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 7, n. 2, p. 100-106, 2012.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1255
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