Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1258
Title: Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures
Authors: NOVO, C
Giacomini, R
DORIA, R
AFZALIAN, A
FLANDRE, D
Issue Date: 2014
Journal: Semiconductor Science and Technology (Print)
ISSN: 0268-1242
Citation: NOVO, C; Giacomini, R; DORIA, R; AFZALIAN, A; FLANDRE, D. Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures. Semiconductor Science and Technology (Print), v. 29, n. 7, p. 075008, 2014.
Access Type: Acesso Aberto
DOI: 10.1088/0268-1242/29/7/075008
URI: https://repositorio.fei.edu.br/handle/FEI/1258
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