Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1262
Title: Modeling Silicon on Insulator MOS Transistor with Nonrectangular-Gate Layouts
Authors: GIACOMINI, R.;RENATO GIACOMINI;R. C. GIACOMINI;RENATO CAMARGO GIACOMINI;Giacomini, R;Giacomini, R. C.;GIACOMINI, RENATO;GIACOMINI, RENATO C.;GIACOMINI, RENATO CAMARGO;GIACOMINI, R C
MARTINO, J. A.
Issue Date: 2006
Journal: Journal of the Electrochemical Society
ISSN: 0013-4651
Citation: GIACOMINI, R.;RENATO GIACOMINI;R. C. GIACOMINI;RENATO CAMARGO GIACOMINI;Giacomini, R;Giacomini, R. C.;GIACOMINI, RENATO;GIACOMINI, RENATO C.;GIACOMINI, RENATO CAMARGO;GIACOMINI, R C; MARTINO, J. A.. Modeling Silicon on Insulator MOS Transistor with Nonrectangular-Gate Layouts. Journal of the Electrochemical Society, v. 153, n. 3, p. 218-222, 2006.
Access Type: Acesso Aberto
DOI: 10.1149/1.2160451
URI: https://repositorio.fei.edu.br/handle/FEI/1262
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