Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1288
Title: Drain Current and Short Channel Effects Modeling in Junctionless Nanowire Transistors
Authors: TREVISOLI, Renan D.
DORIA, R. T.;Doria, Rodrigo T.;Doria, Rodrigo Trevisoli;DORIA, R.T.;Rodrigo Doria, T.;DORIA, RODRIGO
de Souza, Michelly
Pavanello, Marcelo Antonio
Issue Date: 2013
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: TREVISOLI, Renan D.; DORIA, R. T.;Doria, Rodrigo T.;Doria, Rodrigo Trevisoli;DORIA, R.T.;Rodrigo Doria, T.;DORIA, RODRIGO; de Souza, Michelly; Pavanello, Marcelo Antonio. Drain Current and Short Channel Effects Modeling in Junctionless Nanowire Transistors. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 8, p. 116-124, 2013.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1288
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