Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1289
Title: The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime
Authors: DORIA, R. T.
TREVISOLI, R.
DE SOUZA, M.
ESTRADA, M.
CERDEIRA, A.
PAVANELLO, M. A.
Issue Date: 2014
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: DORIA, R. T.; TREVISOLI, R.; DE SOUZA, M.; ESTRADA, M.; CERDEIRA, A.; PAVANELLO, M. A.. The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 9, n. 2, p. 110-117, 2014.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1289
Appears in Collections:Artigos

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