Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1327
Title: Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction
Authors: Sonnenberg, Victor
MARTINO, João Antonio
Issue Date: 1999
Journal: Solid-State Electronics
ISSN: 0038-1101
Citation: Sonnenberg, Victor; MARTINO, João Antonio. Analysis of transition region and accumulation layer effect in the subthreshold slope in SOI nMOSFETs and their influences on the interface trap density extraction. Solid-State Electronics, v. 43, p. 2191-2199, 1999.
Access Type: Acesso Aberto
DOI: 10.1016/S0038-1101(99)00191-4
URI: https://repositorio.fei.edu.br/handle/FEI/1327
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