Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1328
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dc.contributor.authorSONNENBERG, V.;SONNENBERG, V;Sonnenberg, Victor
dc.contributor.authorMARTINO, J. A.
dc.date.accessioned2019-08-19T23:45:31Z-
dc.date.available2019-08-19T23:45:31Z-
dc.date.issued1999
dc.identifier.citationSONNENBERG, V.;SONNENBERG, V;Sonnenberg, Victor; MARTINO, J. A.. Simple Method for Minimizing the Transient Effect in SOI MOSFET at Low Temperature. Electrochemical And Solid State Letters, v. 11, p. 585-586, 1999.
dc.identifier.issn1099-0062
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1328-
dc.relation.ispartofElectrochemical And Solid State Letters
dc.rightsAcesso Aberto
dc.titleSimple Method for Minimizing the Transient Effect in SOI MOSFET at Low Temperaturept_BR
dc.typeArtigopt_BR
dc.description.volume11
dc.description.firstpage585
dc.description.lastpage586
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