Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1344
Title: Comparison between nMOS and pMOS Ω-Gate Nanowire down to 10 nm width as a function of back gate bias
Authors: ITOCAZU, VITOR TATSUO
ALMEIDA, LUCIANO MENDES
Sonnenberg, Victor
AGOPIAN, PAULA GHEDINI DER
BARRAUD, SYLVAIN
VINET, MAUD
FAYNOT, OLIVER
MARTINO, JOAO ANTONIO
Issue Date: 2019
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN: 0268-1242
Citation: ITOCAZU, VITOR TATSUO; ALMEIDA, LUCIANO MENDES; Sonnenberg, Victor; AGOPIAN, PAULA GHEDINI DER; BARRAUD, SYLVAIN; VINET, MAUD; FAYNOT, OLIVER; MARTINO, JOAO ANTONIO. Comparison between nMOS and pMOS Ω-Gate Nanowire down to 10 nm width as a function of back gate bias. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v. 34, n. 3, p. 035003, 2019.
Access Type: Acesso Aberto
DOI: 10.1088/1361-6641/aafccc
URI: https://repositorio.fei.edu.br/handle/FEI/1344
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