Performance of electronic devices submitted to X-rays and high energy proton beams

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13
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2012
Autores
Silveira M.A.G.
Cirne K.H.
Santos R.B.B.
Gimenez S.P.
Medina N.H.
Added N.
Tabacniks M.H.
Barbosa M.D.L.
Seixas L.E.
Melo W.
De Lima J.A.
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Silveira, M.A.G.; Melo, W.; de Lima, J.A.; Cirne, K.H.; Santos, R.B.B.; Gimenez, S.P.; Medina, N.H.; ADDED, N.; Tabacniks, M.H.; Barbosa, M.D.L.; Seixas, L.E.. Performance of electronic devices submitted to X-rays and high energy proton beams. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 135-138, 2012.
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In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. © 2011 Elsevier B.V. All rights reserved.

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