Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs
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3
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Artigo de evento
Data
2012
Autores
Cirne K.
Silveira M.A.G.
Santos R.B.B.
Gimenez S.P.
Barbosa M.D.L.
Tabacniks M.H.
Added N.
Medina N.H.
De Melo W.R.
Seixas Jr. L.E.
De Lima J.A.
Silveira M.A.G.
Santos R.B.B.
Gimenez S.P.
Barbosa M.D.L.
Tabacniks M.H.
Added N.
Medina N.H.
De Melo W.R.
Seixas Jr. L.E.
De Lima J.A.
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Periódico
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Cirne, K.; Seixas, L.E.; de Lima, J.A.; Silveira, M.A.G.; Santos, R.B.B.; Gimenez, S.P.; Barbosa, M.D.L.; Tabacniks, M.H.; ADDED, N.; Medina, N.H.; De Melo, W.R.. Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs. Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms (Print), v. 273, p. 80-82, 2012.
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The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved.