Comparative experimental study between tensile and compressive uniaxially stressed nmugfets under x-ray radiation focusing on analog behavior

Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2013
Autores
Peruzzi V.V.
Gimenez S.P.
Agopian P.G.D.
Silveira M.A.G.
Martino J.A.
Simoen E.
Claeys C.
Orientador
Periódico
ECS Transactions
Título da Revista
ISSN da Revista
Título de Volume
Citação
PERUZZI, V. V.; Gimenez, S. P.; AGOPIAN, P. G. D.; SILVEIRA, M. A. G.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C.. Comparative Experimental Study between Tensile and Compressive Uniaxially Stressed nMuGFETs under X-ray Radiation Focusing on Analog Behavior. ECS Transactions (Online), v. 53, n. 5, p. 177-185, 2013.
Texto completo (DOI)
Palavras-chave
Resumo
This paper describes a detailed experimental comparative study between nMuGFETs implemented with tensile and compressive stresses when submitted to X-ray radiation, taking into account different doses and different channel widths and lengths of the devices. The experimental results show that the intrinsic voltage gain and the unit voltage gain frequency for tensile stressed devices always present a higher immunity to the X-ray radiation (up to 50 Mrad). © The Electrochemical Society.

Coleções