Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1463
Title: The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation
Authors: DE SOUZA FINO, LEONARDO NAVARENHO
Gimenez, S. P.
RENAUX, C.
FLANDRE, DENIS
GUAZZELLI DA SILVEIRA, MARCILEI APARECIDA
Issue Date: 2015
Journal: JICS. Journal of Integrated Circuits and Systems (Ed. Português)
ISSN: 1807-1953
Citation: DE SOUZA FINO, LEONARDO NAVARENHO; Gimenez, S. P.; RENAUX, C.; FLANDRE, DENIS; GUAZZELLI DA SILVEIRA, MARCILEI APARECIDA. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43, 2015.
Access Type: Acesso Restrito
URI: https://repositorio.fei.edu.br/handle/FEI/1463
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