Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1463
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dc.contributor.authorDE SOUZA FINO, LEONARDO NAVARENHO
dc.contributor.authorGimenez, S. P.
dc.contributor.authorRENAUX, C.
dc.contributor.authorFLANDRE, DENIS
dc.contributor.authorGUAZZELLI DA SILVEIRA, MARCILEI APARECIDA
dc.date.accessioned2019-08-19T23:47:19Z-
dc.date.available2019-08-19T23:47:19Z-
dc.date.issued2015
dc.identifier.citationDE SOUZA FINO, LEONARDO NAVARENHO; Gimenez, S. P.; RENAUX, C.; FLANDRE, DENIS; GUAZZELLI DA SILVEIRA, MARCILEI APARECIDA. The Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiation. JICS. Journal of Integrated Circuits and Systems (Ed. Português), v. 10, n. 1, p. 43, 2015.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1463-
dc.relation.ispartofJICS. Journal of Integrated Circuits and Systems (Ed. Português)
dc.rightsAcesso Restrito
dc.titleThe Influence of Back Gate Bias on the OCTO SOI MOSFET?s Response to X-ray Radiationpt_BR
dc.typeArtigopt_BR
dc.description.volume10
dc.description.issuenumber1
dc.description.firstpage43
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