Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1467
Title: Study of proton radiation effects among diamond and rectangular gate MOSFET layouts
Authors: SEIXAS, L E
FINCO, S
SILVEIRA, M A G
MEDINA, N H
GIMENEZ, S P
Issue Date: 2017
Journal: Materials Research Express
ISSN: 2053-1591
Citation: SEIXAS, L E; FINCO, S; SILVEIRA, M A G; MEDINA, N H; GIMENEZ, S P. Study of proton radiation effects among diamond and rectangular gate MOSFET layouts. Materials Research Express, v. 4, n. 1, p. 015901, 2017.
Access Type: Acesso Aberto
DOI: 10.1088/2053-1591/4/1/015901
URI: https://repositorio.fei.edu.br/handle/FEI/1467
Appears in Collections:Artigos

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