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Title: Confiabilidade de dispositivos CMOS submetidos à radiação e campo magnético
Authors: Perin, André Luiz
Advisor: Giacomini, R.
Issue Date: 2016
Abstract: Neste trabalho, foi analisado o efeito da incidência de uma partícula ionizante em um transistor e em associações de transistores. Foi realizada, também, a comparação de leiautes distintos de transistores e de associações. A aplicação do modelo de confiabilidade permitiu a observação de que o conjunto de transistores empilhados se mostrou muito mais confiável do que os transistores individuais em todos os ambientes analisados. Os níveis de corrente de dispositivos de várias dimensões sob efeito de várias intensidades e direções de campos magnéticos foram analisados e, inclusive, foi proposto um dispositivo FinFET com formato de porta em L, com o objetivo de aumentar a sensibilidade aos campos magnéticos aplicados. Foram propostas também estruturas de teste com formato diferenciado, com o objetivo de separar os efeitos nas várias partes dos transistores e um dispositivo adaptador a ser acoplado no equipamento atual para permitir a caracterização dos dispositivos, todos sob os efeitos de um campo magnético uniforme e conhecido.
Reliability is an important feature in components and systems design. It is even more important for critical systems, mainly for electronic circuits, which are part of the complex systems. CMOS technology has been used in many of these circuits, mainly due to the downsizing and reduction of the energy consumed that provides higher performance and lower power consumption, making it suitable for critical and embedded systems. However, some natural or artificial phenomena such as ionizing radiation and high magnetic field intensity, for example, affect the operation of devices built with this technology, changing the reliability of these systems. Radiation can induce transient or permanent effects in transistors used in digital circuits, that may change the logic state of a bit. In analog circuits, for example, the current levels of an amplifier can be significantly affected by the strong magnetic fields, such as those found in power converters, that changes the devices work range to values that are out of the design specifications. In this thesis, the effect of incidence of an ionizing particle in a transistor and transistor associations were analyzed. It was also performed the layouts a comparison of different layouts of single transistors and transistors associations. The reliability models application allowed the observation that the stacked transistors showed to be much more reliable than individual transistors in all analyzed environments. The current levels of several devices, with different dimensions, were analyzed under different magnetic fields intensities and directions, and even proposed a FinFET device with a L-shaped gate, in order to increase the sensitivity to magnetic fields. Test structures, with different format, were also proposed with the aim of separating the effects on transistors parts and, an adapter device, to be coupled to existing equipment, to enable characterization of the device, under the effects of a known uniform magnetic field.
Keywords: Radiação ionizante
Campo magnético
Dispositivos empilhados
Publisher: Centro Universitário FEI, São Bernardo do Campo
Appears in Collections:Teses e Dissertações

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