Projeto e caracterização de diodos PIn laterais-topologias, características e proposta de uma nova configuração
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Tipo de produção
Tese
Data
2017
Autores
Novo, C.
Orientador
Giacomini, R.
Periódico
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ISSN da Revista
Título de Volume
Citação
NOVO, C. Projeto e caracterização de diodos PIn laterais-topologias, características e proposta de uma nova configuração. 2017. 241 p. Tese (Doutorado em Engenharia Elétrica) - Centro Universitário FEI, São Bernardo do Campo, 2017. Disponível em: . Acesso em: 1 ago. 2018.
Texto completo (DOI)
Palavras-chave
Diodos,Sensor de imagem,Eficiência quântica
Resumo
A exploração científica e tecnológica no campo da óptica é atualmente limitada pela capacidade de detecção do sensor utilizado. Basicamente, estes fotodetectores são compostos por elementos sensíveis à radiação eletromagnética, que deveriam converter, com grande eficiência, um sinal óptico em um sinal elétrico. Entretanto, ainda existem lacunas de
conhecimento no que diz respeito ao funcionamento dos detectores ópticos. Este trabalho consiste na análise profunda das características dos diodos PIN de silício em diferentes tecnologias, os quais são largamente utilizados como detectores ópticos em escala comercial pela indústria de semicondutores. Os diodos PIN laterais são compostos por uma região P+ e uma região N+, intercaladas por uma região intrínseca e são utilizados principalmente em
sistemas de imagem em geral, sistemas de comunicações ópticas e sistemas para aplicações especiais, tais como indústria médica, indústria do meio ambiente, indústria de petróleo e gás, indústria de segurança, indústria automotiva, indústria espacial e bélica, entre outras. Além disso, também podem ser utilizados para determinar o comprimento de onda e a intensidade da radiação eletromagnética incidente em um sistema óptico. Para o bom uso nessas aplicações, é importante a análise mais profunda dos detectores de radiação eletromagnética PIN, operando em ambientes hostis, tais como temperaturas extremas e a utilização de terminais de controle para melhorar o seu desempenho. O foco deste trabalho é a análise da eficiência quântica, responsividade e relação sinal-ruído dos detectores sujeitos à variação de tecnologias de fabricação. Para que isto seja possível, alguns fotodiodos foram desenvolvidos integralmente para este trabalho, desde a elaboração do leiaute, até a sua fabricação e caracterização experimental através da emissão óptica de LEDs (Light Emiting Diodes), utilizando um microespectômetro que opera na faixa de 350 a 800nm. A análise foi dividida pelo tipo de aplicação requerida, já que o processo tecnológico
envolvido é diferente para cada aplicação. Para os sensores de imagem foi demonstrado que a maior responsividade alcançada foi de 0,45 A/W para o vermelho e 0,035 A/W para o azul em temperatura ambiente. Já em altas temperaturas (T=500K), o dispositivo atingiu 0,77 e 0,052 A/W para o vermelho e azul, respectivamente. Já para o caso de aplicações especiais, a utilização da tecnologia SOI (Silicon On Insulator) apresentou-se como alternativa muito favorável, pois fornece a possibilidade de utilização do back-gate (porta traseira), cuja análise em conjunto com a variação da temperatura, foi inovadora na comunidade científica. No caso de baixas temperaturas (T=100K), a melhor condição de polarização é no modo de inversão, chegando a atingir 37,5% de eficiência com VBG de +6V. No caso de temperaturas superiores a 300K, a melhor condição é no modo acumulação, chegando a uma eficiência de 61,9% para T=300K e 84,52% para T=500K (ambas com VBG=-2V). Através de toda a análise desenvolvida, foi possível propor um projeto de dispositivo inovador, o qual foi chamado de diodo PG-PIN (Partially-Gated PIN Diode), que consiste em um diodo PIN lateral com porta parcial adjacente à região N+. A polarização do terminal de porta funciona como um sinal de controle capaz de alterar a resposta do dispositivo, resultando na determinação do
comprimento e intensidade da radiação eletromagnética incidente. Este dispositivo é capaz de substituir a utilização de filtros de cor em um sistema óptico, fazendo com que o sistema seja mais vantajoso economicamente e com melhor desempenho.
The scientific and technological research in the field of optics is currently limited by the ability of the used detector. Basically these photodetectors are composed of elements sensitive to electromagnetic radiation, which should convert in a very efficient way, an optical signal into an electrical signal. However, there are still gaps in knowledge regarding the operation of the optical detectors, since most of the studies in microelectronics have been directed to the transistor and not to these devices. Thus, this work is a deep study of the characteristics of silicon PIN diodes on different technologies, since they are widely used as optical detectors on a commercial scale by the semiconductor industry. The PIN diodes are composed of a P + region and a N+ region, interleaved by an intrinsic region and are mainly used in image systems in general, optical communication systems and systems for special applications such as medical industries, environmental industries, oil and gas industry, the security industry, automotive, space and defense industry, among others. In addition, they can also be used to determine the incident wavelength and intensity of electromagnetic radiation on an optical system. Therefore, it is urgent to deeper analysis of PIN electromagnetic radiation detectors, especially operating in hostile environments, which present extreme temperatures, and control signals to improve their performance. The focus of this study was to analyze the efficiency, signal to noise ratio and responsivity of detectors subject to changes in temperature in different applications and technologies. The devices were characterized experimentally by means of the optical emission of LEDs, using a microespectometer, which operates in the range 350 to 800nm. The analysis was divided by the required type of application, since the involved technological process is different for each application. For image sensors has been shown that the highest responsivity was 0.45A/W for red light and 0,035A/W for blue light at room temperature. For higher temperature (500K), the responsivity was found to be 0,77A/W and 0,052A/W for red and blue, respectively. As for the case of special applications, the use of SOI technology has presented itself as a very favorable alternative because it provides the possibility of using the back-gate together with the backgate, whose analysis was never done before. In the case of lower temperatures (T = 100K), the best polarization condition is the inversion mode, reaching 37.5% efficiency with + 6V VBG. In the case of temperatures above 300K, the best condition is in accumulation mode, reaching an efficiency of 61.9% for T = 300K and 84.52% for T = 500K (both with VBG = - 2V). Throughout the developed analysis, it was possible to propose an innovative device design, which was called Right Gate, which consists of a lateral PIN diode with a gate terminal adjacent to the N + region. The gate terminal polarization functions as a control signal capable of altering the response of the device, resulting in the determination of the length and intensity of the incident electromagnetic radiation. This device is able to replace the use of color filters in an optical system, making the system more economically advantageous and with better performance.
The scientific and technological research in the field of optics is currently limited by the ability of the used detector. Basically these photodetectors are composed of elements sensitive to electromagnetic radiation, which should convert in a very efficient way, an optical signal into an electrical signal. However, there are still gaps in knowledge regarding the operation of the optical detectors, since most of the studies in microelectronics have been directed to the transistor and not to these devices. Thus, this work is a deep study of the characteristics of silicon PIN diodes on different technologies, since they are widely used as optical detectors on a commercial scale by the semiconductor industry. The PIN diodes are composed of a P + region and a N+ region, interleaved by an intrinsic region and are mainly used in image systems in general, optical communication systems and systems for special applications such as medical industries, environmental industries, oil and gas industry, the security industry, automotive, space and defense industry, among others. In addition, they can also be used to determine the incident wavelength and intensity of electromagnetic radiation on an optical system. Therefore, it is urgent to deeper analysis of PIN electromagnetic radiation detectors, especially operating in hostile environments, which present extreme temperatures, and control signals to improve their performance. The focus of this study was to analyze the efficiency, signal to noise ratio and responsivity of detectors subject to changes in temperature in different applications and technologies. The devices were characterized experimentally by means of the optical emission of LEDs, using a microespectometer, which operates in the range 350 to 800nm. The analysis was divided by the required type of application, since the involved technological process is different for each application. For image sensors has been shown that the highest responsivity was 0.45A/W for red light and 0,035A/W for blue light at room temperature. For higher temperature (500K), the responsivity was found to be 0,77A/W and 0,052A/W for red and blue, respectively. As for the case of special applications, the use of SOI technology has presented itself as a very favorable alternative because it provides the possibility of using the back-gate together with the backgate, whose analysis was never done before. In the case of lower temperatures (T = 100K), the best polarization condition is the inversion mode, reaching 37.5% efficiency with + 6V VBG. In the case of temperatures above 300K, the best condition is in accumulation mode, reaching an efficiency of 61.9% for T = 300K and 84.52% for T = 500K (both with VBG = - 2V). Throughout the developed analysis, it was possible to propose an innovative device design, which was called Right Gate, which consists of a lateral PIN diode with a gate terminal adjacent to the N + region. The gate terminal polarization functions as a control signal capable of altering the response of the device, resulting in the determination of the length and intensity of the incident electromagnetic radiation. This device is able to replace the use of color filters in an optical system, making the system more economically advantageous and with better performance.