Deposition of diamond films on single crystalline silicon carbide substrates
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Tipo de produção
Artigo
Data
2019-11-14
Autores
MUKHERJEE, DEBARATI
OLIVEIRA, FELIPE
TRIPPE, SIMONE CAMARGO
ROTTER, SHLOMO
NETO, MIGUEL
SILVA, RUI
MALLIK, AWADESH KUMAR
HAENEN, KEN
ZETTERLING, CARL-MIKAEL
MENDES, JOANA CATARINA
OLIVEIRA, FELIPE
TRIPPE, SIMONE CAMARGO
ROTTER, SHLOMO
NETO, MIGUEL
SILVA, RUI
MALLIK, AWADESH KUMAR
HAENEN, KEN
ZETTERLING, CARL-MIKAEL
MENDES, JOANA CATARINA
Orientador
Periódico
DIAMOND AND RELATED MATERIALS
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Citação
MUKHERJEE, DEBARATI; OLIVEIRA, FELIPE; TRIPPE, SIMONE CAMARGO; ROTTER, SHLOMO; NETO, MIGUEL; SILVA, RUI; MALLIK, AWADESH KUMAR; HAENEN, KEN; ZETTERLING, CARL-MIKAEL; MENDES, JOANA CATARINA. Deposition of diamond films on single crystalline silicon carbide substrates. DIAMOND AND RELATED MATERIALS, v. 101, p. 107625, 2020.
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Palavras-chave
Semeadura DN,Diamante CVD,Passivação do dispositivo
Resumo
O carboneto de silício (SiC) é um material de banda larga que lenta, mas constantemente, se afirma como uma alternativa confiável ao silício (Si) para aplicações eletrônicas de alta temperatura, em particular para a indústria de veículos elétricos. A passivação de dispositivos de SiC com filmes de diamante é esperado para diminuir as correntes de fuga e evitar a avaria prematura dos dispositivos, conduzindo a dispositivos mais eficientes. No entanto, para uma passivação eficiente, a interface entre os dois materiais precisa ser virtualmente livre de vazios e filmes de diamante de alta qualidade são necessários desde os primeiros estágios de crescimento. Para avaliar o impacto dos parâmetros de deposição e semeadura nas propriedades dos depósitos, filmes de diamante foram depositados em substratos de SiC pordeposição de vapor químico de filamento quente (HFCVD). Antes da etapa de semeadura, os substratos foram expostos às condições de crescimento de diamante (pré-tratamento PT) e a semeadura foi realizada com uma solução de partículas de nanodiamante de detonação (DND) e com grãos de 6–12 e 40–60 μm. Filmes de diamante foram então cultivados em diferentes temperaturas e com diferentes concentrações de metano e os depósitos foram observados em um microscópio eletrônico de varredura(MEV); sua qualidade foi avaliada com espectroscopia Raman.
Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.
Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.