Analytical Model for Low-Frequency Noise in Junctionless Nanowire Transistors

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Citações na Scopus
6
Tipo de produção
Artigo
Data
2020-04-24
Autores
TREVISOLI, RENAN
Marcelo Antonio Pavanello
CAPOVILLA, CARLOS EDUARDO
BARRAUD, SYLVAIN
DORIA, RODRIGO TREVISOLI
Orientador
Periódico
IEEE TRANSACTIONS ON ELECTRON DEVICES
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Citação
TREVISOLI, R D; PAVANELLO, M. A.; CAPOVILLA, C. E.; BARRAUD, S.; DORIA, R. T. Analytical model for Low-Frequency noise in junctionless nanowire transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 67, p. 2536-2543, 2020.
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Palavras-chave
analytical model,interface traps,junctionless,low-frequency noise (LFN),nanowires
Resumo
This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through tridimensional numerical simulations, accounting for different trap configurations, as well as devices with different channel lengths, nanowire widths, and doping concentrations. Experimental results of short-channel junctionless transistors have also been used to demonstrate the model's applicability and accuracy.

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