Performance and Analysis of n-Type Vertically Stacked Nanowires Regarding Harmonic Distortion

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Artigo
Data
2020-08-11
Autores
CARVALHO, CESAR AUGUSTO BELCHIOR
SILVA, GENARO MARINIELLO DA
PAZ, BRUNA CARDOSO
BARRAUD, SYLVAIN
VINET, MAUD
FAYNOT, OLIVIER
Marcelo Antonio Pavanello
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Periódico
JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
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Citação
CARVALHO, C. A. B.; MARINIELLO, G.; PAZ, B. C.; BARRAUD, S.; VINET, M.; FAYNOT, O.; PAVANELLO, M. A. Performance and analysis of n-Type vertically stacked nanowires regarding harmonic distortion. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, p. 1-5, 2020.
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stacked nanowires,harmonic distortion,MOSFET,SOI transistor
Resumo
Thispaperstudies theharmonic distortion (or non-linearity) of vertically stacked SOI nanowireswith differ-ent fin widths and channel lengths. The total harmonic distor-tion and third order harmonic distortion areused as figuresof meritin this work. The harmonicdistortion analysis is per-formed taking in consideration the differences between transis-tor’s intrinsic voltage gain and transconductance over drain current ratio.

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