Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3477
Title: Ionizing radiation hardness tests of GaN HEMTs for harsh environments
Authors: VILAS BOAS, ALEXIS C.
MELO, MARCO ANTONIO ASSIS DE
Roberto Santos
Renato Giacomini
MEDINA N. H.
SEIXA, L. E.
FINCO, S.
PALOMO, F. R.
ROMERO-MAESTRE, A.
Marcilei Aparecida Guazzelli
Issue Date: 5-Jan-2021
Abstract: The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from.
Keywords: TID
Radiation effects
GaN
HEMT
Journal: MICROELECTRONICS RELIABILITY
ISSN: 0026-2714
Citation: VILAS BOAS, A. C.; MELO, M. A. A. DE; SANTOS, R.B.B.; GIACOMINI, R.; MEDINA, N. H.; SEIXAS, L. E.; FINCO, S.; PALOMO, F. R.; ROMERO-MAESTRE, A.; GUAZZELLI, M. A. Ionizing radiation hardness tests of GaN HEMTs for harsh environments. MICROELECTRONICS RELIABILITY, v. 116, p. 114000, 2021.
Access Type: Acesso Aberto
DOI: 10.1016/j.microrel.2020.114000
URI: https://repositorio.fei.edu.br/handle/FEI/3477
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