UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level

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Citações na Scopus
5
Tipo de produção
Artigo
Data
2020-07-31
Autores
COSTA, F. J.
DORIA, R. T.
Rodrigo Trevisoli Doria
Orientador
Periódico
JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
Título da Revista
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Título de Volume
Citação
COSTA, F. J.; TREVISOLI, R.; DORIA, R. T.. UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
Texto completo (DOI)
Palavras-chave
SOI,UTBB,Self-Heating,Thermal Resistance,Thermal-Coupling
Resumo
The main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical simulations, validated with experimental data from the literature. In this analysis, it could be observed that devices located on the channel length direction provoke a reduced thermal coupling and devices with their drain region next to each other suffer of an increased thermal coupling due to the lumped thermal energy. It also could be observed a degradation in some electrical parameters and in the thermal properties of a device under the influence of surrounded devices biased.

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