Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3479
Title: UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level
Authors: COSTA, F. J.
DORIA, R. T.
Rodrigo Trevisoli Doria
Issue Date: 31-Jul-2020
Abstract: The main goal of this work is to perform a first-time analysis of the thermal cross-coupling in a system composed by some devices in an integration node degree composed by advanced UTBB SOI MOSFETs through numerical simulations, validated with experimental data from the literature. In this analysis, it could be observed that devices located on the channel length direction provoke a reduced thermal coupling and devices with their drain region next to each other suffer of an increased thermal coupling due to the lumped thermal energy. It also could be observed a degradation in some electrical parameters and in the thermal properties of a device under the influence of surrounded devices biased.
Keywords: SOI
UTBB
Self-Heating
Thermal Resistance
Thermal-Coupling
Journal: JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
ISSN: 1807-1953
Citation: COSTA, F. J.; TREVISOLI, R.; DORIA, R. T.. UTBB MOSFETs Thermal Coupling Analysis in Technological Node Level. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
Access Type: Acesso Aberto
DOI: 10.29292/jics.v15i2.194
URI: https://repositorio.fei.edu.br/handle/FEI/3479
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