Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3480
Title: The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors
Authors: GRAZIANO JUNIOR, N.
TREVISOLI, R.
DORIA, R. T.
Issue Date: 31-Jul-2020
Abstract: This paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from physical devices and it is demonstrated how the quality of gate oxide affects the performance of such transistors, when the density of traps, the channel width, the doping concentration and the gate bias are varied.
Keywords: Junctionless nanowire transistor
NBTI
Density of interface traps
Gap density
Surface potential
Journal: JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
ISSN: 1807-1953
Citation: GRAZIANO JUNIOR, N.; TREVISOLI, R.; DORIA, R. T. The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
Access Type: Acesso Aberto
DOI: 10.29292/jics.v15i2.196
URI: https://repositorio.fei.edu.br/handle/FEI/3480
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