The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors
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2
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Artigo
Data
2020-07-31
Autores
GRAZIANO JUNIOR, N.
TREVISOLI, R.
DORIA, R. T.
TREVISOLI, R.
DORIA, R. T.
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Periódico
JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
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Citação
GRAZIANO JUNIOR, N.; TREVISOLI, R.; DORIA, R. T. The Correlation between the NBTI Effect and the Surface Potential and Density of Interface Traps in Junctionless Nanowire Transistors. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
Texto completo (DOI)
Palavras-chave
Junctionless nanowire transistor,NBTI,Density of interface traps,Gap density,Surface potential
Resumo
This paper discusses the nature of degradation by NBTI effect in MOS junctionless devices when varying the density of interface traps and surface potential. The data obtained in simulations are compared with results from physical devices and it is demonstrated how the quality of gate oxide affects the performance of such transistors, when the density of traps, the channel width, the doping concentration and the gate bias are varied.