Effect of Interface Traps on the RTS Noise Behavior of Junctionless Nanowires
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Citações na Scopus
2
Tipo de produção
Artigo
Data
2020-08-10
Autores
PICOLI JUNIOR, M. P.
TREVISOLI, R.
DORIA, R.T.
TREVISOLI, R.
DORIA, R.T.
Orientador
Periódico
JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
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Título de Volume
Citação
PICOLI JUNIOR, M. P.; TREVISOLI, R.; DORIA, R.T. Effect of interface traps on the RTS noise behavior of junctionless nanowires. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
Texto completo (DOI)
Palavras-chave
JNT,RTS Noise,G-r Noise,Interface Traps
Resumo
This work presents a study on the effects of single interface traps throughout the Junctionless Nanowire Transistor (JNT). The results are obtained by analyzing the Random Telegraph Signal noise of the device, which consists of an exception of the generation-recombination noise. The results obtained are mostly from numerical simulation, validated through experimental data. As in physical devices, it is impossible to obtain a single trap in specific locations, we have used a distribution of traps with similar characteristics in a way that they behave like a single trap. The results show the behave considering a set of traps distributions, using an exponential model. The traps are distributed from the conduction band to the valence band.