Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3494
Title: Using the Hexagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
Authors: PERUZZI , VINICIUS VONO
CRUZ, WILLIAM
SILVA, GABRIEL AUGUSTO DA
SIMOEN, EDDY
CLAEYS, COR
Salvador Gimenez
Issue Date: 10-Aug-2020
Abstract: This paper describes an experimental comparative study of the mismatching between the Diamond (hexagonal gate geometry) and Conventional (rectangular gate shape) n-chan-nel Metal-Oxide-Semiconductor (MOS) Field Effect Transis-tors (MOSFETs), which were manufactured in an 130 nm Sili-con-Germanium Bulk Complementary MOS (CMOS) technol-ogy and exposed to different X-rays Total Ionizing Doses (TIDs). The results indicate that the Diamond layout style with an alpha () angle equal to 90 ̊ for MOSFETs is capable of re-ducing the device mismatching by at least 17% regarding the electrical parameters studied as compared to the Conventional MOSFET (CnM) counterparts. Therefore, the Diamond layout style can be considered an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs.
Keywords: Diamond Layout Style
Hardness-by-design technique
MOSFETs matching, analog CMOS IC
Total Ion-izing Dose
Journal: JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS)
Citation: PERUZZI , V. V.; CRUZ, W.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; GIMENEZ, S. Using the hexagonal layout style for MOSFETs to boost the device matching in Ionizing radiation environments. JICS. JOURNAL OF INTEGRATED CIRCUITS AND SYSTEMS (ED. PORTUGUÊS), v. 15, n. 2, p. 1-5, 2020.
Access Type: Acesso Aberto
DOI: 10.29292/jics.v15i2.185
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