Simulation analysis of the fin height influence on the electrical parameters of junctionless nanowire transistors
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2018-05-13
Autores
RIBEIRO, T. A.
CERDEIRA, A.
Marcelo Antonio Pavanello
CERDEIRA, A.
Marcelo Antonio Pavanello
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ECS Transactions
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RIBEIRO, T. A.; CERDEIRA, A.; PAVANELLO, M. A. Simulation analysis of the fin height influence on the electrical parameters of junctionless nanowire transistors. ECS Transactions, v. 85, n. 8, p. 85-90, Mayo, 2018.
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This work analyzes the effects of the fin height on the electrical parameters of junctionless transistors through experimentally calibrated 3-D simulations. Results show that for long channel devices the better compromise is obtained with higher fin height, with higher ION/IOFF and smaller values of SS and DIBL, whereas for short channel ones the better compromise is found with smaller fin height, due to the reduced SS and DIBL and increased ION/IOFF ratio.