Analysis of p-type Junctionless nanowire transistors with different crystallographic orientations
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2017-07-28
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TREVISOLLI, R.
Rodrigo Doria
Michelly De Souza
Marcelo Antonio Pavanello
Rodrigo Doria
Michelly De Souza
Marcelo Antonio Pavanello
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SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
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TREVISOLLI, R.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A. Analysis of p-type Junctionless nanowire transistors with different crystallographic orientations. Analysis of p-type Junctionless nanowire transistors with different crystallographic orientations, 2017.
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© 2017 IEEE.This work presents an analysis of the influence of the crystal orientation on the performance of p-type Junctionless Nanowire Transistors. The main electrical parameters, such as threshold voltage, transconductance and subthreshold slope, were analyzed by means of experimental data, demonstrating that the substrate rotation can significantly worsen the electrical behavior of these devices.